INTRINSIC STRESS AND STRESS GRADIENTS AT THE SIO2/SI INTERFACE IN STRUCTURES PREPARED BY THERMAL-OXIDATION OF SI AND SUBJECTED TO RAPID THERMAL ANNEALING

被引：146

作者：

FITCH, JT

BJORKMAN, CH

LUCOVSKY, G

POLLAK, FH

YIN, X

机构：

[1] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210

[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584599

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：775 / 781

页数：7

共 27 条

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