EFFECT OF IMPURITY SEGREGATION ON CRYSTAL MORPHOLOGY OF Y-BAR SYNTHETIC QUARTZ

被引:12
作者
IWASAKI, F
SHINOHARA, AH
IWASAKI, H
SUZUKI, CK
机构
[1] Laboratório de Quartzo, Departamento de Materiais, Faculdade de Engenharia de Campinas UNICAMP, Campinas, Siio Paulo, 13100, UN/CAMP
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 06期
关键词
Ai impurity; Atomic absorption spectroscopy; H impurity; Hydrothermal growth; Infrared spectroscopy; Morphology; Synthetic quartz; X-ray topography;
D O I
10.1143/JJAP.29.1139
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of Al and H impurities on the crystal morphology of Y-bar synthetic quartz were studied. The growth velocities perpendicular to the Y-axis were evaluated in relation to the Al and H impurity segregations on the growth interfaces. It was found that the -X-growth region has the highest H content and shows the lowest growth velocity, due to the effect of H2O adsorbed on the growth interface in hydrothermal solution. Therefore, the -X-face, (bar1;bar1;20), always becomes larger in size. Al has a selective effect on the (11bar2;2) and (bar1;bar1;2bar2;) faces to suppress the growth velocities and thus is important for crystal morphology. The growth velocities perpendicular to these faces, however, are controllable by the Al impurity content in the nutrient. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码:1139 / 1142
页数:4
相关论文
共 13 条