VACANCY IN SI - SUCCESSFUL DESCRIPTION WITHIN THE LOCAL-DENSITY APPROXIMATION

被引：222

作者：

SUGINO, O ^{[1
]}

OSHIYAMA, A ^{[1
]}

机构：

[1] NEC CORP LTD, MICROELECTR RES LABS, 34 MIYUKIGAOKA, TSUKUBA 305, JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.68.1858

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have performed large-scale total-energy electronic-structure calculations within the local-density approximation for the negatively charged vacancy in Si. The obtained Jahn-Teller distortion, the electronic structures, and the hyperfine coupling tensors are in good agreement with the experimental data available, indicating the validity of the one-electron theory, contrary to the prevailing picture based on model calculations.

引用

页码：1858 / 1861

页数：4

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