ANOMALOUS CAPACITANCE OF QUANTUM-WELL DOUBLE BARRIER DIODES

被引：12

作者：

BORIC, O

TOLMUNEN, TJ

KOLLBERG, E

FRERKING, MA

机构：

[1] CALTECH,DIV ENGN & APPL SCI,PASADENA,CA 91125

[2] JET PROP LAB,CTR SPACE MICROELECTR TECHNOL,PASADENA,CA 91109

[3] CHALMERS UNIV TECHNOL,S-41296 GOTHENBURG,SWEDEN

来源：

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1992年 / 13卷 / 06期

关键词：

QUANTUM WELL DOUBLE BARRIER DIODES; SCHOTTKY DIODES; S-PARAMETER; IMPEDANCE; CAPACITANCE;

D O I：

10.1007/BF01011596

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The S-parameters of several different quantum well double barrier diodes have been measured. A technique has been developed for measuring whisker contacted diodes with an HP 8510B automatic network analyzer. Special coaxial mounts using K-connectors were designed to enable measurements up to 20 GHz. The voltage-dependent conductance and capacitance were derived from the measured reflection coefficient of each device. The C/V characteristics were observed to exhibit an anomalous increase at voltages corresponding the the negative differential resistance region (NDR). These are the first reported S-parameter measurements in the negative differential resistance region of quantum well double barrier diodes. A theory is presented that explains, in part, the observed results.

引用

页码：799 / 814

页数：16

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