TIGHTLY CONFINED ONE-DIMENSIONAL STATES IN T-SHAPED GAAS EDGE QUANTUM WIRES WITH ALAS BARRIERS

被引：32

作者：

SOMEYA, T

AKIYAMA, H

SAKAKI, H

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

[2] UNIV TOKYO,JRDC,PRESTO,MEGURO KU,TOKYO 153,JAPAN

[3] JRDC,QUANTUM TRANSIT PROJECT,MEGURO KU,TOKYO 153,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 26期

关键词：

D O I：

10.1063/1.114136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have designed and prepared a T-shaped GaAs edge quantum wire (T-QWR) structure with AlAs barriers by cleaved edge overgrowth method. Three photoluminescence (PL) peaks have been observed and their origins are identified using the spatially resolved PL technique. The effective binding energy of carriers in this T-QWR is precisely determined as the energy spacing between T-QWRs and the adjacent QWs. When the well width of constituent QWs was 5 nm, the effective binding energy is found to be as large as 35 meV, which is far beyond the thermal energy kT at room temperature.© 1995 American Institute of Physics.

引用

页码：3672 / 3673

页数：2

共 9 条

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