CHARACTERISTICS OF P-CUINSE2 N-CDS HETEROJUNCTION PREPARED BY EVAPORATION OF CU2SE AND IN2SE3

被引：6

作者：

HACHIUMA, Y ^{[1
]}

ASHIDA, A ^{[1
]}

YAMAMOTO, N ^{[1
]}

ITO, T ^{[1
]}

CHO, Y ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE,COLL ENGN,SAKAI,OSAKA 593,JAPAN

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 35卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90147-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have tried to prepare CuInSe2 thin films by using a vacuum evaporation method with rf plasma. Two binary compounds, Cu2Se and In2Se3 have been used as source elements. Films have been prepared at substrate temperature of RT and 400 degrees C. We have prepared the film by the stack of Cu-Selenide and In-Selenide layers at rf power of 400 W and a substrate temperature of 400 degrees C, and succeeded to obtain (112) highly oriented CuInSe2. Furthermore, we have measured the current-voltage (I-V) characteristics on the heterojunction between p-CuInSe2 and n-CdS.

引用

页码：247 / 254

页数：8

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