ETCHING RATE OF AN ION-BOMBARDED TUNGSTEN (110) SURFACE

被引：1

作者：

ANDERSON, GS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 04期

关键词：

D O I：

10.1063/1.1709806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1989 / &

共 16 条

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