ENHANCED T0 VALUES IN GASB/ALSB MULTIQUANTUM WELL HETEROSTRUCTURES

被引：8

作者：

SCHWEIZER, H

ZIELINSKI, E

HAUSSER, S

STUBER, R

PILKUHN, MH

GRIFFITHS, G

KROEMER, H

SUBBANNA, S

机构：

[1] UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER

[2] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

D O I：

10.1109/JQE.1987.1073451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：977 / 982

页数：6

共 23 条

[1] ELECTRONIC-STRUCTURE OF TWO-DIMENSIONAL SEMICONDUCTOR SYSTEMS [J].

ALTARELLI, M .

JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) :472-487

[2]

BASTARD G, 1982, ACTA ELECTRON, V25, P147

[3] AUGER RECOMBINATION IN GAAS AN GASB [J].

BENZ, G ;

CONRADT, R .

PHYSICAL REVIEW B, 1977, 16 (02) :843-855

[4] VALENCE BAND STRUCTURE OF III-V COMPOUNDS [J].

BRAUNSTEIN, R ;

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) :1423-&

[5]

CAMASSEL J, 1978, PHYS REV B, V17, P4718, DOI 10.1103/PhysRevB.17.4718

[6]

CASEY HC, 1978, HETEROSTRUCTURE LA A, P165

[7]

CEBULLA U, 1985, SPR P MRS EUR M, P161

[8] CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS [J].

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1236-1245

[9]

Gobel E. O., 1982, GaInAsP alloy semiconductors, P313

[10] GASB/ALSB MULTIQUANTUM WELL STRUCTURES - MOLECULAR-BEAM EPITAXIAL-GROWTH AND NARROW-WELL PHOTO-LUMINESCENCE [J].

GRIFFITHS, G ;

MOHAMMED, K ;

SUBBANA, S ;

KROEMER, H ;

MERZ, JL .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1059-1061

← 1 2 3 →