LOCALIZATION OF EXCITONS AND ANDERSON TRANSITION IN ZNSE1-XTEX SOLID-SOLUTIONS

被引：71

作者：

REZNITSKY, A

PERMOGOROV, S

VERBIN, S

NAUMOV, A

KOROSTELIN, Y

NOVOZHILOV, V

PROKOVEV, S

机构：

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 52卷 / 01期

关键词：

D O I：

10.1016/0038-1098(84)90708-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：13 / 16

页数：4

共 18 条

[1]

ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1001

[2] MECHANISM OF CHARGE TRANSPORT AND LIGHT EMISSION IN ZNSEXTE1-X P-N JUNCTIONS [J].

AVEN, M ;

GARWACKI, W .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) :2302-&

[3]

BARANOVSKII SD, 1978, SOV PHYS SEMICOND+, V12, P1328

[4] FLUORESCENCE LINE NARROWING, LOCALIZED EXCITON-STATES, AND SPECTRAL DIFFUSION IN THE MIXED SEMICONDUCTOR CDSXSE1-X [J].

COHEN, E ;

STURGE, MD .

PHYSICAL REVIEW B, 1982, 25 (06) :3828-3840

[5] OPTICAL PROPERTIES OF TELLURIUM AS AN ISOELECTRONIC TRAP IN CADMIUM SULFIDE [J].

CUTHBERT, JD ;

THOMAS, DG .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1573-&

[6] CDS1-XTEX AS PERSISTENCE-TYPE SEMICONDUCTOR MIXED-CRYSTALS [J].

GOEDE, O ;

HEIMBRODT, W ;

MULLER, R .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (02) :543-550

[7] ISOELECTRONIC IMPURITY TE IN CDS1-XSEX MIXED-CRYSTALS [J].

GOEDE, O ;

HEIMBRODT, W .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 110 (01) :175-182

[8] LIFETIMES OF BOUND EXCITONS IN CDS [J].

HENRY, CH ;

NASSAU, K .

PHYSICAL REVIEW B, 1970, 1 (04) :1628-&

[9] LUMINESCENCE EXCITATION-SPECTRA AND THEIR EXCITON STRUCTURES OF ZNS PHOSPHORS .2. AL-DOPED AND TE-DOPED PHOSPHORS [J].

HOSHINA, T ;

KAWAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :279-287

[10]

Ivanova G. N., 1981, Soviet Physics - Solid State, V23, P1579

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