THE EFFECT OF TRANSIENTS ON HOT CARRIERS

被引：19

作者：

HANSCH, W

WEBER, W

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 06期

关键词：

D O I：

10.1109/55.31737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：252 / 254

页数：3

共 21 条

[1]

AOKI M, 1987, P VLSI S, P49

[2]

BELLENS R, 1988, P ESSDERC, P651

[3]

CHEN KL, 1986, IEEE T ELECTRON DEV, V33, P424, DOI 10.1109/T-ED.1986.22504

[4] HOT-CARRIER-INDUCED MOSFET DEGRADATION UNDER AC STRESS [J].

CHOI, JY ;

KO, PK ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :333-335

[5]

CHOI JY, 1987, P VLSI S, P45

[6] DYNAMIC CHANNEL HOT-CARRIER DEGRADATION OF NMOS TRANSISTORS BY ENHANCED ELECTRON-HOLE INJECTION INTO THE OXIDE [J].

DOYLE, BS ;

BOURCERIE, M ;

MARCHETAUX, JC ;

BOUDOU, A .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :237-239

[7]

ENGL WL, 1987, VLSI PROCESS DEVICE

[8]

HANSCH W, 1988, P INT ELECTRON DEVIC, P366

[9] A SIMPLE METHOD TO EVALUATE DEVICE LIFETIME DUE TO HOT-CARRIER EFFECT UNDER DYNAMIC STRESS [J].

HORIUCHI, T ;

MIKOSHIBA, H ;

NAKAMURA, K ;

HAMANO, K .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :337-339

[10]

HSU FC, 1985, IEEE T ELECTRON DEV, V32, P394

← 1 2 3 →