OBSERVATION OF LASER-INDUCED MELTING OF SILICON FILM FOLLOWED BY AMORPHIZATION

被引：26

作者：

SAMESHIMA, T

HARA, M

SANO, N

USUI, S

机构：

[1] Sony Research Center, Hodogaya-ku, Yokohama

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 08期

关键词：

Laser-induced amorphization; Laser-induced crystallization;

D O I：

10.1143/JJAP.29.L1363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transient conductance measurements were used to study laser-induced amorphization of polycrystalline silicon (poly-Si) film. A 20 nm-thick phosphorus-doped poly-Si film fabricated on a quartz substrate was melted by irradiation with a 30 ns-pulsed XeCl excimer laser. When the melt duration exceeded 70 ns, the silcon film was completely amorphized through rapid solidification. Formation of the amorphous thin film may be brought about by homogeneous solidification without crystalline nucleation. © 1990 IOP Publishing Ltd.

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收藏

页码：L1363 / L1365

页数：3

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