TOPOLOGY OF COVALENT NONCRYSTALLINE SOLIDS - SHORT-RANGE ORDER IN SEYGEXSB1-X-Y ALLOYS

被引:24
作者
FOUAD, SS
机构
[1] Physics Department, Ain Shams University, Cairo
关键词
D O I
10.1088/0022-3727/28/11/013
中图分类号
O59 [应用物理学];
学科分类号
摘要
The pronounced glass-forming tendencies of alloys of Se and Ge with Sb are discussed topologically in terms of the chemical bonds expected to be present in these materials. Using a simple consideration based on coordination numbers (m), and bond energies, the average number of near neighbours of each type expected to surround atom has been estimated. These average numbers of bonds have been used to estimate the cohesive energies (CE) of these glasses, assuming simple additivity of bond energies. A trial also has been made to explain the previously published data of threshold voltage (V-th), optical properties (E(04)) and glass transition temperature (T-g) of these materials; on the basis of our calculations the correlation between T-g and E(04) has been interpreted in terms of a proposed fluidity equation for covalent liquids with 2.3 less than or equal to m less than or equal to 2.49.
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页码:2318 / 2320
页数:3
相关论文
共 21 条
[1]  
AFIFI MA, 1992, INDIAN J PURE AP PHY, V30, P211
[2]   ELECTRICAL AND THERMAL-PROPERTIES OF CHALCOGENIDE GLASS SYSTEM SE75GE25-XSBX [J].
AFIFI, MA ;
LABIB, HH ;
ELFAZARY, MH ;
FADEL, M .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (02) :167-169
[3]   ELECTRONEGATIVITY VALUES FROM THERMOCHEMICAL DATA [J].
ALLRED, AL .
JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1961, 17 (3-4) :215-221
[5]  
BOER KW, 1970, J APPL PHYS, V41, P6
[6]  
FULCHER GS, 1925, J AM CERAM SOC, V6, P339
[7]  
Haisty R. W., 1969, Journal of Non-Crystalline Solids, V1, P399, DOI 10.1016/0022-3093(69)90022-2
[9]   VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M ;
ADLER, D ;
FRITZSCHE, H .
PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507
[10]   COMPOSITIONAL TRENDS IN OPTICAL PROPERTIES OF AMORPHOUS LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M .
PHYSICAL REVIEW B, 1973, 7 (12) :5237-5252