MOLYBDENUM SILICIDE BASED ATTENUATED PHASE-SHIFT MASKS

被引:6
作者
JONCKHEERE, R
RONSE, K
POPA, O
VANDENHOVE, L
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期
关键词
D O I
10.1116/1.587439
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:3765 / 3772
页数:8
相关论文
共 13 条
[1]   ANTIREFLECTIVE MOSI PHOTOMASKS [J].
CHIBA, A ;
MATSUDA, S ;
WATAKABE, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06) :2480-2485
[2]  
FISCHER T, 1993, MICROELECTRON ENG, V23, P311
[3]   MONOLAYER HALF-TONE PHASE-SHIFTING MASK FOR KRF EXCIMER-LASER LITHOGRAPHY [J].
IWABUCHI, Y ;
USHIODA, J ;
TANABE, H ;
OGURA, Y ;
KISHIDA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B) :5900-5902
[4]  
KOSTELAK RL, IN PRESS P SPIE, V2197
[5]  
LIN B, 1991, BACHUS NEWS, P7
[6]  
LIN BJ, 1992, SOLID STATE TECHNOL, V35, P43
[7]  
NAKAJIMA M, IN PRESS P SPIE, V2197
[8]   DRY ETCHED MOLYBDENUM SILICIDE PHOTOMASKS FOR SUBMICRON INTEGRATED-CIRCUIT FABRICATION [J].
PIERRAT, C ;
TARASCON, RG ;
PEABODY, ML ;
HARRIOTT, LR ;
VAIDYA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3132-3137
[9]  
RONSE K, 1993, P SOC PHOTO-OPT INS, V1927, P2, DOI 10.1117/12.150416
[10]  
RONSE K, 1994, IN PRESS P SPIE, V2197