EPITAXIAL CDXHG1-XTE PHOTOVOLTAIC DETECTORS

被引：30

作者：

BECLA, P ^{[1
]}

PAWLIKOWSKI, JM ^{[1
]}

机构：

[1] WROCLAW TECH UNIV,INST PHYS,PL-50370 WROCLAW,POLAND

来源：

INFRARED PHYSICS | 1976年 / 16卷 / 04期

关键词：

D O I：

10.1016/0020-0891(76)90087-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：457 / 464

页数：8

共 30 条

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[2] BARANOWSKI J, 1972, 3 P NAT S SEM EL WAR
[3] BECLA P, IN PRESS
[4] BECLA P, 1974, OPTICA APPLICATA, V4, P3
[5] BOVINA LA, 1973, FIZ TEKH POLUPROV, V7, P2301
[6] EPITAXIAL (CDHG)TE INFRARED PHOTOVOLTAIC DETECTORS
COHENSOLAL, G
RIANT, Y
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (10) : 436 - +
[7] BAND STRUCTURE AND LASER ACTION IN PBXSN1-XTE
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MELNGAIL.I
STRAUSS, AJ
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (26) : 1193 - &
[8] DOWGIALLO B, IN PRESS
[9] Figurovskii E. N., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P1857
[10] MIXED 3-V COMPOUND SEMICONDUCTORS AS PHOTOVOLTAIC IR DETECTORS
HERGENROTHER, KM
[J]. INFRARED PHYSICS, 1964, 4 (03): : 187 - &