DEFECT STATES IN 2.0-MEV ELECTRON-IRRADIATED PHOSPHORUS-DOPED SILICON

被引：11

作者：

AWADELKARIM, OO ^{[1
]}

MONEMAR, B ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.343232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4779 / 4788

页数：10

共 49 条

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[6] ALTERNATING DONOR-LIKE-ACCEPTOR-LIKE CONFIGURATIONALLY BISTABLE DEFECT IN IRRADIATED PHOSPHORUS-DOPED SILICON [J].

AWADELKARIM, OO ;

MONEMAR, B .

PHYSICAL REVIEW B, 1988, 38 (14) :10116-10119

[7]

AWADELKARIM OO, IN PRESS

[8] A BISTABLE DEFECT IN ELECTRON-IRRADIATED BORON-DOPED SILICON [J].

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[10] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES [J].

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