ELECTRON TRAPPING IN RAD-HARD RCA ICS IRRADIATED WITH ELECTRONS AND GAMMA-RAYS

被引：4

作者：

DANCHENKO, V

BRASHEARS, SS

FANG, PH

机构：

[1] NORTHROP SERV INC, GREENBELT, MD 20771 USA

[2] BOSTON COLL, DEPT PHYS, CHESTNUT HILL, MA 02167 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333536

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1492 / 1496

页数：5

共 15 条

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[2] THERMAL ANNEALING OF RADIATION-DAMAGE IN CMOS ICS IN THE TEMPERATURE RANGE-140-DEGREES-C TO +375-DEGREES-C [J].

DANCHENKO, V ;

FANG, PH ;

BRASHEARS, SS .

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[3] ACTIVATION-ENERGIES OF THERMAL ANNEALING OF RADIATION-INDUCED DAMAGE IN N-CHANNEL AND P-CHANNEL OF CMOS INTEGRATED-CIRCUITS .2. [J].

DANCHENKO, V ;

FANG, PH ;

BRASHEARS, SS .

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GRIFFIN, GF ;

BRASHEARS, SS .

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[5] INVESTIGATION OF RADIATION DAMAGE IN MOSFETS USING BIAS-TEMPERATURE TREATMENTS [J].

DANCHENKO, V ;

BRASHEARS, SS .

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[6] EFFECTS OF ELECTRIC FIELDS ON ANNEALING OF RADIATION DAMAGE IN MOSFETS [J].

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KILLIANY, JM ;

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[9] A STUDY OF RADIATION EFFECTS ON SIO2 AND A12O3 LAYERS USING THERMOLUMINESCENCE GLOW CURVE TECHNIQUES [J].

MITCHELL, JP .

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[10]

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