EPITAXIAL-GROWTH OF BA1-XKXBIO3 THIN-FILMS BY RF-MAGNETRON SPUTTERING

被引:4
作者
IYORI, M
KAMINO, M
TAKAHASHI, K
YOSHISATO, Y
NAKANO, S
机构
[1] Functional Materials Research Center, SANYO Electric Co., Ltd. 1-18-13, Hirakata, Osaka, 573, Hashiridani
来源
PHYSICA C | 1991年 / 185卷
关键词
D O I
10.1016/0921-4534(91)91107-F
中图分类号
O59 [应用物理学];
学科分类号
摘要
As-grown Ba1-xKxBiO3 (BKBO) epitaxial thin films with a critical temperature of 16.3 K have been successfully prepared at 300-degrees-C on SrTiO3(110) substrates by a high-pressure rf-magnetron sputtering. A preferred orientation of (110) and epitaxial growth of the BKBO film on the substrates were confirmed by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED), respectively.
引用
收藏
页码:1965 / 1966
页数:2
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