DETERMINATION OF REFRACTIVE-INDEXES OF IN0.53AL0.40GA0.07AS AND IN0.53AL0.11GA0.36AS ON INP IN THE WAVELENGTH RANGE FROM 280 TO 1900 NM BY SPECTROSCOPIC ELLIPSOMETRY

被引：4

作者：

DINGES, HW

BURKHARD, H

LOSCH, R

NICKEL, H

SCHLAPP, W

机构：

[1] Deutsche Bundespost Telekom Forschungszentrum beim FTZ, D-6100 Darmstadt

来源：

APPLIED SURFACE SCIENCE | 1993年 / 65-6卷

关键词：

D O I：

10.1016/0169-4332(93)90699-C

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The refractive indices of In0.53Al0.40Ga0.07As and In0.53Al0.11Ga0.36As layers on InP are measured for the first time by spectroscopic ellipsometry in the wavelength range from 280 to 1900 nm. In previous papers we found out that between InP and MBE-grown In0.52Al0.48As and In0.53Ga0.47AS layers an interface layer exists, due to the interaction of arsenic with InP in the preheat phase of the MBE growth. We investigated three layers of each composition with different thicknesses for the determination of the refractive indices and the exact values of the thicknesses.

引用

页码：442 / 446

页数：5

共 8 条

[1]

[Anonymous], 1985, HDB OPTICAL CONSTANT

[2] OPTICAL-PROPERTIES OF IN1-XGAXP1-YASY, INP, GAAS, AND GAP DETERMINED BY ELLIPSOMETRY [J].