ISOLATION EFFECTS IN SINGLE-PLANE AND DUAL-PLANE VLSI INTERCONNECTS

被引:11
作者
CARIN, L [1 ]
WEBB, KJ [1 ]
机构
[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742
关键词
D O I
10.1109/22.52580
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The issue of interline coupling in high-speed VLSI interconnects is addressed. A full-wave-based technique is used to numerically solve for the modes and hence the line voltages and currents for multiconductor microstrip. The accuracy of these results is compared with time-domain experimental data. Isolation lines placed between signal lines and grounded at both ends are considered as a means of significantly reducing crosstalk. It is shown that the performance of such lines depends on several factors such as relative mode velocities, signal rise and fall times, and line length. These points are illuminated by considering the effects of isolation lines in two geometries of interest in high-speed integrated circuits. On the basis of these results one can determine the usefulness of isolation lines for a given geometry. © 1990 IEEE
引用
收藏
页码:396 / 404
页数:9
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