GRAIN-BOUNDARY DEFECT CHEMISTRY OF ACCEPTOR-DOPED TITANATES - SPACE-CHARGE LAYER WIDTH

被引：244

作者：

VOLLMAN, M

WASER, R

机构：

[1] Institut für Werkstoffe der Elektrotechnik, RWTH Aachen, Aachen

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1994年 / 77卷 / 01期

关键词：

D O I：

10.1111/j.1151-2916.1994.tb06983.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The grain boundary space charge depletion layers in acceptor-doped SrTiO3 and BaTiO3 ceramics were investigated by impedance spectroscopy in the time and frequency domain. Based on the layer width and its dependence on the acceptor concentration, the temperature, and the oxygen partial pressure during annealing, a suggestion for a refined Schottky model is proposed. The local distribution of the donor-type grain boundary states causing the depletion layer and the resulting band bending are discussed.

引用

页码：235 / 243

页数：9

共 39 条

[1] DC ELECTRICAL DEGRADATION OF PEROVSKITE-TYPE TITANATES .3. A MODEL OF THE MECHANISM [J].