ENHANCED EXCITON ABSORPTION AND SATURATION LIMIT IN STRAINED INGAAS/INP QUANTUM-WELLS

被引:8
作者
JIANG, Y
TEICH, MC
WANG, WI
机构
[1] Department of Electrical Engineering, Columbia University, New York
关键词
D O I
10.1063/1.351341
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new approach for enhancing the exciton absorption and increasing the saturation limit in quantum wells (QWs), using tensile strain, is proposed. Because of the valence-band mixing in a strained QW, the in-plane hole mass can become very large or negative. This leads to a heavy electron-hole reduced mass (exciton mass), and therefore to a small exciton radius. Exciton absorption is substantially increased because of the increased electron-hole overlap probability in these small-radius excitons. The effects of saturation are also substantially reduced because of decreased charge-screening effects for small-radius excitons and because the rapid dispersal of the photon-generated excitons reduces the Pauli exclusion effect.
引用
收藏
页码:769 / 772
页数:4
相关论文
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