INGAASP/INGAASP MULTIPLE-QUANTUM-WELL MODULATOR WITH IMPROVED SATURATION INTENSITY AND BANDWIDTH OVER 20-GHZ

被引：32

作者：

DEVAUX, F

BIGAN, E

OUGAZZADEN, A

PIERRE, B

HUET, F

CARRE, M

CARENCO, A

机构：

[1] CNET (Centre National d'Etude des Telecommunications)

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 07期

关键词：

D O I：

10.1109/68.145250

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-mode modulator was realized from an APMOCVD grown structure. The multiple-quantum-well electroabsorptive material is made of shallow InGaAsP wells separated by InGaAsP barriers. It exhibits at 1.54-mu-m (TE) a 17 dB extinction ratio for a 3 V drive voltage, a 2.7 dB on-state loss and a small-signal bandwidth over 20 GHz with 1-2 mW of coupled optical power.

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页码：720 / 723

页数：4

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