FORMATION OF PARTIALLY COHERENT ANTIMONY PRECIPITATES IN ION-IMPLANTED THERMALLY ANNEALED SILICON

被引：12

作者：

PENNYCOOK, SJ

NARAYAN, J

HOLLAND, OW

机构：

来源：

关键词：

D O I：

10.1063/1.331992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6875 / 6878

页数：4

共 7 条

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[3]

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[4]

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[5]

HAASEN P, 1978, PHYSICAL METALLURGY, P207

[6] SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (01) :225-236

NARAYAN, J ;

HOLLAND, OW .