PROPERTIES OF UNDOPED AND PARA-TYPE HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS

被引：18

作者：

CHAUDHURI, P

RAY, S

BATABYAL, AK

BARUA, AK

机构：

来源：

THIN SOLID FILMS | 1984年 / 121卷 / 03期

关键词：

D O I：

10.1016/0040-6090(84)90305-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：233 / 246

页数：14

共 17 条

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[5]

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[7] GLOW-DISCHARGE A-SI1-XCX - H FILMS STUDIED BY ELECTRON-SPIN-RESONANCE AND IR MEASUREMENTS [J].

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[8] DEFECTS IN HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY-FILMS PREPARED BY GLOW-DISCHARGE DECOMPOSITION AND SPUTTERING [J].

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[9] NMR AND IR STUDIES ON HYDROGENATED AMORPHOUS SI1-XCX FILMS [J].

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[10] SOME PROPERTIES OF INTRINSIC AND PHOSPHORUS DOPED AMORPHOUS-SILICON THIN-FILMS [J].

RAY, S ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (01) :23-28

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