SINGLE-CRYSTAL GROWTH OF CDSIAS2 BY CHEMICAL VAPOR TRANSPORT - ITS STRUCTURE AND ELECTRICAL-PROPERTIES

被引:5
作者
AVIROVIC, M
LUXSTEINER, M
ELROD, U
HONIGSCHMID, J
BUCHER, E
机构
关键词
D O I
10.1016/0022-0248(84)90177-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:185 / 194
页数:10
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共 21 条
[1]  
ABDURAKHIMOV AA, 1981, IZV AKAD NAUK FTKGN, P12
[2]  
Averkieva G. K., 1970, Soviet Physics - Doklady, V15, P386
[3]   ELECTRICALLY ACTIVE POINT DEFECTS IN CDSIAS2 CRYSTALS [J].
AVERKIEVA, GK ;
GORYUNOVA, NA ;
PROCHUKHAN, VD ;
RUD, YV ;
SERGINOV, M .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 5 (03) :571-+
[4]   ELECTRIC PROPERTIES OF CDSIAS2 CRYSTALS [J].
AVERKIEVA, GK ;
GORYUNOVA, NA ;
PROCHUKAN, VD ;
RUD, YV ;
SERGINOV, M .
PHYSICA STATUS SOLIDI, 1969, 34 (01) :K5-+
[5]   SEMICONDUCTING A2B4CV2 COMPOUNDS [J].
BORSHCHE.AS ;
GORYUNOV.NA ;
KESAMANL.FP ;
NASLEDOV, DN .
PHYSICA STATUS SOLIDI, 1967, 21 (01) :9-&
[6]  
BORSHCHEVSKII AS, 1969, SOV PHYS SEMICOND+, V2, P1145
[7]   CONCERNING GROWTH OF SINGLE CRYSTALS OF II-IV-V DIAMOND-LIKE COMPOUNDS ZNSIP2, CDSIP2, ZNGEP2, AND CDSNP2 AND STANDARD ENTHALPIES OF FORMATION FOR ZNSIP2 AND CDSIP2 [J].
BUEHLER, E ;
WERNICK, JH .
JOURNAL OF CRYSTAL GROWTH, 1971, 8 (04) :324-&
[8]  
CARROL AF, 1981, REV ELECTROCHEM SOC, V128, P8
[9]  
DOVLETMURADOV C, 1976, SOV PHYS SEMICOND+, V10, P986
[10]  
DOVLETMURADOV C, 1975, SOV TECH PHYS LETT, V1, P382