A P-CHANNEL MESFET ON SILICON USING AN ERBIUM GATE

被引：6

作者：

BOHLIN, K

NILSSON, HT

TOVE, PA

机构：

[1] Univ of Uppsala, Electronic Dep,, Uppsala, Swed, Univ of Uppsala, Electronic Dep, Uppsala, Swed

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 09期

关键词：

ERBIUM AND ALLOYS - TRANSISTORS; FIELD EFFECT;

D O I：

10.1016/0038-1101(85)90084-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A p-channel MESFET (metal semiconductor field-effect transistor) has been fabricated using erbium as gate material and iridium as source and drain contacts. The results show that it is possible to achieve p-type devices with characteristics comparable to n-type devices. As substrate silicon on sapphire (SOS) was used since it gives a well-defined channel thickness. The thickness of the silicon was 0. 6 mu m; after processing this was reduced to about 0. 5 mu m, which was, thus, the ultimate channel thickness.

引用

页码：913 / 915

页数：3

共 5 条

[1]

BOHLIN K, 1984, 11TH P NORD SEM M HE, P181

[2] SINGLE-STEP OPTICAL LIFT-OFF PROCESS [J].