DETERMINATION OF ALLOY COMPOSITION IN GAAS-INAS SYSTEM BY REFLECTIVITY

被引：7

作者：

JONES, CE

机构：

来源：

关键词：

D O I：

10.1366/000370266774386155

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：161 / &

共 10 条

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[3] CARDONA M, 1964, P INT C PHYS SEMICON, P181
[4] CONRAD R, TO BE PUBLISHED
[5] DEPTH OF MECHANICAL DAMAGE IN GALLIUM ARSENIDE
JONES, CE
HILTON, AR
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[6] OPTICAL CONSTANTS OF GERMANIUM IN THE REGION-1 TO 10 EV
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[7] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV
PHILIPP, HR
TAFT, EA
[J]. PHYSICAL REVIEW, 1960, 120 (01): : 37 - 38
[8] TAUC J, 1960, P INT C SEMICONDUCTO, P375
[9] WILLIAMS EW, TO BE PUBLISHED
[10] REFLECTIVITY SPECTRA OF GASB-INSB + GAAS-INAS ALLOYS
WOOLLEY, JC
BLAZEY, KW
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (07) : 713 - &