HOPPING AND BAND TRANSPORT IN AMORPHIZED SEMICONDUCTORS - A COMPARATIVE-STUDY

被引：3

作者：

DENG, XC

LIU, XH

BOHRINGER, K

KALBITZER, S

机构：

[1] MAX PLANCK INST KERNPHYS,D-6900 HEIDELBERG,FED REP GER

[2] CHINESE ACAD SCI,SHANGHAI INST MET,SHANGHAI,PEOPLES R CHINA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 33卷 / 01期

关键词：

D O I：

10.1007/BF01197082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：29 / 35

页数：7

共 23 条

[1]

ABELES B, 1975, ADV PHYS, V24, P407, DOI 10.1080/00018737500101431

[2] ELECTRICAL TRANSPORT PHENOMENA IN AMORPHOUS GALLIUM-PHOSPHIDE FILMS [J].

BARBE, DF ;

SAKS, NS .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1666-1672

[3]

BEYER W, 1974, 6TH P INT C AM LIQ S, P251

[4] ON THE VARIATION OF HOPPING TRANSPORT IN AMORPHOUS-SILICON WITH PREPARATION CONDITIONS [J].

BOHRINGER, K ;

MULLER, G ;

KALBITZER, S .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1982, 46 (04) :301-304

[5]

BRODIE DE, 1977, 7TH P INT C AM LIQ S, P472

[6]

CROWDER BL, 1971, 2 INT C ION IMPL SEM, P255

[7] COMPARATIVE-STUDY OF AMORPHOUS III-V COMPOUNDS [J].

GHEORGHIU, A ;

THEYE, ML .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :397-402

[8] VARIABLE RANGE HOPPING IN A NONUNIFORM DENSITY OF STATES [J].

HAMILTON, EM .

PHILOSOPHICAL MAGAZINE, 1972, 26 (04) :1043-&

[9] ELECTRICAL PROPERTIES OF AMORPHOUS INSB [J].

HAUSER, JJ .

PHYSICAL REVIEW B, 1973, 8 (06) :2678-2684

[10]

HILL RM, 1977, 7TH P INT C AM LIQ S, P229

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