SYNTHESIS OF FE16N2 FILMS BY USING REACTIVE PLASMA

Synthesis of alpha''-Fe16N2 films using reactive plasma was examined by conventional sputtering and plasma evaporation, respectively. Under controlled plasma (T(e)=0.2 approximately 0.6 eV, N(e) congruent-to 10(9) cm-3) alpha''-Fe16N2 films were synthesized on MgO single crystal substrates with film thickness ranging from 0.03 to 1 mum for sputtering and 0.2 mum for plasma evaporation. Deposition rate was 200 angstrom/min for sputtering and 100 approximately 420 angstrom/min for plasma evaporation. sigma(s) for alpha''-Fe16N2 films fabricated by plasma evaporation showed 235 emu/g and for the sputtered films showed 218 emu/g. These values are very small compared to the earlier reported value, 2.9T (310emu/g). The effects of orderring of N atoms in b.c.t. lattice and volume effect of unit cell are discussed in connection with sigma(s).