AN EXOTHERMIC PHENOMENON OF SILICON OXIDATION BY N2O

被引:3
作者
CHAO, TS
CHEN, WH
SUN, SC
CHANG, HY
机构
[1] National Nano Device Laboratory
关键词
D O I
10.1149/1.2221036
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In this paper we first report an exothermic phenomenon of silicon oxidation by N2O. This phenomenon results from the decomposition of N2O at high temperature. The heat generated by introducing N2O increases the furnace temperature during the oxidation process and results in an increased oxide thickness. To control temperature well, we developed a two-table profiling technique to obtain a more stable processing temperature. We also found the growth kinetic of N2O decomposed into N2 and O2 is similar to dilute O2(10%)/Ar.
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页码:L160 / L161
页数:2
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