EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS

被引：13

作者：

HAN, LK ^{[1
]}

YOON, GW ^{[1
]}

KWONG, DL ^{[1
]}

MATHEWS, VK ^{[1
]}

FAZAN, PC ^{[1
]}

机构：

[1] MICRON TECHNOL INC,BOISE,ID 83706

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 08期

关键词：

D O I：

10.1109/55.296216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the effects of post-deposition rapid thermal annealing on the electrical characteristics of chemical vapor deposited (CVD) Ta2O5 (approximately 10 nm) on NH3-nitrided polycrystalline silicon (poly-Si) storage electrodes for stacked DRAM applications. Three different post-deposition annealing conditions are compared: a) 800-degrees-C rapid thermal O2 annealing (RTO) for 20 sec followed by rapid thermal N2 annealing (RTA) for 40 sec, b) 800-degrees-C RTO for 60 sec and c) 900-degrees-C RTO for 60 sec. Results show that an increase in RTO temperature and time decreases leakage current at the cost of capacitance. However, over-reoxidation induces thicker oxynitride formation at the Ta2O5/poly-Si interface, resulting in the worst time-dependent dielectric breakdown (TDDB) characteristics.

引用

页码：280 / 282

页数：3

共 13 条

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