INFLUENCE OF SI AND S DOPING ON STRUCTURAL DEFECTS IN LEC-GROWN GALLIUM-ARSENIDE

被引：22

作者：

GILING, LJ ^{[1
]}

WEYHER, JL ^{[1
]}

MONTREE, A ^{[1
]}

FORNARI, R ^{[1
]}

ZANOTTI, L ^{[1
]}

机构：

[1] MASPEC INST, CNR, I-43100 PARMA, ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 79卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90448-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：271 / 279

页数：9

共 32 条

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