HYDROGEN PASSIVATION OF DEFECTS IN SILICON RIBBON GROWN BY THE EDGE-DEFINED FILM-FED GROWTH-PROCESS

被引：84

作者：

HANOKA, JI ^{[1
]}

SEAGER, CH ^{[1
]}

SHARP, DJ ^{[1
]}

PANITZ, JKG ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

关键词：

D O I：

10.1063/1.94022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：618 / 620

页数：3

共 9 条

[1] 1ST AND 2ND ORDER TWIN BOUNDARIES IN EDGE DEFINED FILM GROWTH-SILICON RIBBON
CUNNINGHAM, B
STRUNK, H
AST, DG
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 237 - 239
[2] Cunningham B., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P51
[3] ELECTRON-BEAM-INDUCED CURRENTS IN SEMICONDUCTORS
HANOKA, JI
BELL, RO
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1981, 11 : 353 - 380
[4] HANOKA JI, 1980, S ELECTRONIC OPTICAL
[5] Kalejs J. P., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P13
[6] PASSIVATION OF GRAIN-BOUNDARIES IN SILICON
SEAGER, CH
SHARP, DJ
PANITZ, JKG
DAIELLO, RV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 430 - 435
[7] SEAGER CH, 1979, APPL PHYS LETT, V34, P537
[8] Taylor A. S., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P589
[9] WALD FV, 1981, CRYSTALS GROWTH PROP, V5, P147