STRUCTURAL AND ELECTRICAL-PROPERTIES OF TA2O5 GROWN BY THE PLASMA-ENHANCED LIQUID SOURCE CVD USING PENTA-ETHOXY TANTALUM SOURCE

被引:64
作者
MURAWALA, PA [1 ]
SAWAI, M [1 ]
TATSUTA, T [1 ]
TSUJI, O [1 ]
FUJITA, S [1 ]
FUJITA, S [1 ]
机构
[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 60601,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期
关键词
PE-LS-CVD; TA2O5; TA(OC2H5)5 SOURCE; X-RAY; AES; SIMS; OTS; WELL-DEFINED C-V; LOW LEAKAGE CURRENT; HIGH DIELECTRIC CONSTANT; RAPID THERMAL ANNEALING;
D O I
10.1143/JJAP.32.368
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on structural and electrical properties of tantalum penta oxide (Ta2O5) material with a high dielectric constant grown from a penta ethoxy tantalum [Ta(OC2H5)5] liquid source by the plasma-enhanced liquid source chemical vapor deposition (PE-LS-CVD) technique. We have investigated several basic plasma deposition conditions. Structural properties investigated by theta-2theta X-ray measurements showed the amorphous nature of the films, and Auger electron spectrosopy (AES) and secondary ion mass spectroscopy (SIMS) indicated growth of Ta2O5 films having proper stoichiometry (Ta/O=0.4). Optical transmission spectroscopy showed that the band gap (E(g)) of Ta2O5 is 5.28 eV. Electrical measurements performed on Au/Ta2O5/n, p-Si metal oxide semiconductor (MOS) structure exhibited very well defined capacitance-voltage (C-V) characteristics with flat band voltage as low as -0.1 eV, low leakage current, high breakdown voltage and high dielectric constant (25-38). As a hitherto unreported step in Ta2O5 processing we also performed rapid thermal (RTA) annealing at 700-degrees-C and 900-degrees-C for 5 min which resulted in much improved electrical properties. All results suggest growth of high-quality Ta2O5 films from a carbon-based Ta liquid source, due to an effect of plasma-enhanced deposition process.
引用
收藏
页码:368 / 375
页数:8
相关论文
共 13 条
  • [1] PHOTO-PROCESS OF TANTALUM OXIDE-FILMS AND THEIR CHARACTERISTICS
    MATSUI, M
    OKA, S
    YAMAGISHI, K
    KUROIWA, K
    TARUI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (04): : 506 - 511
  • [2] MORT J, 1986, PLASMA DEPOSITED THI, P23
  • [3] MURAWALA PA, 1992, MATER RES SOC SYMP P, V265, P319, DOI 10.1557/PROC-265-319
  • [4] MURAWALA PA, 1992, 1992 INT C SOL STAT, P527
  • [5] Numasawa Y., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P43, DOI 10.1109/IEDM.1989.74224
  • [6] Saitoh M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P680
  • [7] OXIDIZED TA2O5/SI3N4 DIELECTRIC FILMS ON POLYCRYSTALLINE SI FOR DRAMS
    SHINRIKI, H
    NISHIOKA, Y
    OHJI, Y
    MUKAI, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) : 328 - 332
  • [8] UV-O3 AND DRY-O2 - 2-STEP ANNEALED CHEMICAL VAPOR-DEPOSITED TA2O5 FILMS FOR STORAGE DIELECTRICS OF 64-MB DRAMS
    SHINRIKI, H
    NAKATA, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) : 455 - 462
  • [9] SINRIKI H, 1991, 1991 INT C SOL STAT, P198
  • [10] TANIMOTO S, 1990, 1990 INT C SOL STAT, pL195