HIGH-TEMPERATURE PRESSURE SENSOR USING P-TYPE DIAMOND PIEZORESISTORS

被引：27

作者：

WERNER, M

DORSCH, O

OBERMEIER, E

机构：

[1] TU Berlin, 13355 Berlin, Sekr. TIB 3.1

来源：

关键词：

APPLICATIONS; DEVICE; ELECTRICAL PROPERTIES; POLYCRYSTALLINE DIAMOND FILMS;

D O I：

10.1016/0925-9635(94)05231-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pressure sensors with boron-doped, mesa-etched polycrystalline diamond piezoresistors on top of a silicon square membrane (1300 mu m x 1300 mu m x 30 mu m) were manufactured. Electrical insulation of the boron-doped piezoresistors from the silicon substrate was achieved by an undoped diamond film. The longitudinally arranged piezoresistors were connected to form a Wheatstone bridge. The sensor shows an excellent linearity of the bridge voltage vs. pressure in the temperature range from - 50 to 170 degrees C for a pressure range of 100 kPa. The low sensitivity of 1.64 x 10(-5) mV (V Pa)(-1) can be improved using lower doping concentrations of the boron-doped piezoresistors.

引用

页码：873 / 876

页数：4

共 7 条

[1]

Werner, Dorsch, Obermeier, 1st European Conf. on High Temperature Electronics, (1993)

[2]

Dorsch, Holzner, Werner, Obermeier, Harper, Johnston, Chalker, Buckley-Golder, Diamond Relat. Mater., 2, (1993)

[3]

Wur, Davidson, Kang, Kinser, 7th Int. Conf. on Solid-State Sensors and Actuators, Transducers '93, (1993)

[4]

Aslam, Taher, Masood, Tamor, Potter, Appl. Phys. Lett., 60, 23, (1992)

[5]

Aslam, Taher, Tamor, Potter, Elder, 7th Int. Conf. on Solid-State Sensors and Actuators, Transducers '93, (1993)

[6]

Werner, Dorsch, Baerwind, Ersoy, Obermeier, Johnston, Romani, Chalker, Moore, Buckley-Golder, Diamond Relat. Mater., 3, (1994)

[7]

Dorsch, Werner, Obermeier, Harper, Johnston, Buckley-Golder, Diamond Relat. Mater., 1, (1992)

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