HIGH-ELECTRON-MOBILITY IN PSEUDOMORPHIC MODULATION-DOPED IN0.75GA0.25AS/INALAS HETEROSTRUCTURES ACHIEVED WITH GROWTH INTERRUPTIONS

被引：14

作者：

DROUOT, V ^{[1
]}

GENDRY, M ^{[1
]}

SANTINELLI, C ^{[1
]}

VIKTOROVITCH, P ^{[1
]}

HOLLINGER, G ^{[1
]}

ELLEUCH, S ^{[1
]}

PELOUARD, JL ^{[1
]}

机构：

[1] ECOLE CENT LYON,LEAME,F-69131 ECULLY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.358879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth interruptions under cation stabilization have been used to smooth the two interfaces defining the pseudomorphic channel layer of InAlAs/In 0.75Ga0.25As/InAlAs heterostructures grown on InP. This leads to a 4 K electron mobility as high as 170 000 cm2/V s, due to the reduction of interface roughness scattering. This structure is used as a reference ("zero" interface roughness) for a model to determine the influence of interface roughness scattering on the electron mobility as a function of the channel indium fraction (xIn=0.53, 0.65, and 0.75) in heterostructures grown without growth interruption. It is shown that the interface roughness scattering decreases with increasing indium concentration of the channel in the range 0.53-0.65 and saturates beyond xIn=0.65. © 1995 American Institute of Physics.

引用

页码：1810 / 1812

页数：3

共 19 条

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .2. LOW-TEMPERATURE MOBILITY [J].