INITIAL-STAGES OF GROWTH OF GAAS ON SILICON(211) SUBSTRATES BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY

被引：6

作者：

FOTIADIS, L

KAPLAN, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 24期

关键词：

D O I：

10.1063/1.101974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2538 / 2540

页数：3

共 15 条

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