BOND CPA FOR HYDROGENATED AMORPHOUS-SILICON

被引:5
作者
BARRIO, RA [1 ]
SANSORES, LE [1 ]
ELLIOTT, RJ [1 ]
机构
[1] UNIV OXFORD,DEPT THEORET PHYS,OXFORD OX1 3NP,ENGLAND
关键词
D O I
10.1016/0022-3093(83)90550-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:177 / 180
页数:4
相关论文
共 7 条
[1]   VIBRATIONS OF DEFECTS IN AMORPHOUS SI [J].
BARRIO, RA ;
ELLIOTT, RJ .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (21) :4493-4501
[2]  
BARRIO RA, UNPUB
[3]   GENERALIZED LOCATOR-COHERENT - POTENTIAL APPROACH TO BINARY ALLOYS [J].
BLACKMAN, JA ;
ESTERLING, DM ;
BERK, NF .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08) :2412-+
[4]  
LEATH PL, 1981, P NATO WORKSHOP EXCI
[5]  
MARTINEZ E, UNPUB
[6]   FAR-INFRARED ABSORPTION OF PURE AND HYDROGENATED A-GE AND A-SI [J].
SHEN, SC ;
FANG, CJ ;
CARDONA, M ;
GENZEL, L .
PHYSICAL REVIEW B, 1980, 22 (06) :2913-2919
[7]  
Yonezawa F, 1973, PROGR THEOR PHYS S, V53, P1, DOI DOI 10.1143/PTPS.53.1