LATTICE MISFIT BETWEEN GAP AND SI

[1] ON THE PREPARATION OF THE PHOSPHIDES OF ALUMINUM, GALLIUM AND INDIUM [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1960, 82 (07) : 1537 - 1540

[2] CHUNG DW, 1985, UNPUB J CRYSTAL GROW

[3] THE APPLICATION OF CONVERGENT-BEAM ELECTRON-DIFFRACTION TO THE DETECTION OF SMALL SYMMETRY CHANGES ACCOMPANYING PHASE-TRANSFORMATIONS .1. GENERAL AND METHODS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (05): : 1117 - 1133

[4] PRAZISIONSBESTIMMUNG DER GITTERKONSTANTEN VON AIIIBV-VERBINDUNGEN [J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (05): : 369 - 371

[5] HIGHER-ORDER LAUE ZONE EFFECTS IN ELECTRON-DIFFRACTION AND THEIR USE IN LATTICE-PARAMETER DETERMINATION [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1977, 354 (1677): : 197 - &

[6] MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P559

[7] SHAW N, 1964, ACTA PHYS, V20, P699

[8] Steeds J.W., 1979, INTRO ANAL ELECTRON, P387, DOI [10.1007/978-1-4757-5581-7, 10.1007/978-1-4757-5581-7_15]

[9] POLAR-ON-NONPOLAR EPITAXY - SUB-LATTICE ORDERING IN THE NUCLEATION AND GROWTH OF GAP ON SI (211) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 534 - 539

[1] ON THE PREPARATION OF THE PHOSPHIDES OF ALUMINUM, GALLIUM AND INDIUM [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1960, 82 (07) : 1537 - 1540

[2] CHUNG DW, 1985, UNPUB J CRYSTAL GROW

[3] THE APPLICATION OF CONVERGENT-BEAM ELECTRON-DIFFRACTION TO THE DETECTION OF SMALL SYMMETRY CHANGES ACCOMPANYING PHASE-TRANSFORMATIONS .1. GENERAL AND METHODS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (05): : 1117 - 1133

[4] PRAZISIONSBESTIMMUNG DER GITTERKONSTANTEN VON AIIIBV-VERBINDUNGEN [J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (05): : 369 - 371

[5] HIGHER-ORDER LAUE ZONE EFFECTS IN ELECTRON-DIFFRACTION AND THEIR USE IN LATTICE-PARAMETER DETERMINATION [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1977, 354 (1677): : 197 - &

[6] MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P559

[7] SHAW N, 1964, ACTA PHYS, V20, P699

[8] Steeds J.W., 1979, INTRO ANAL ELECTRON, P387, DOI [10.1007/978-1-4757-5581-7, 10.1007/978-1-4757-5581-7_15]

[9] POLAR-ON-NONPOLAR EPITAXY - SUB-LATTICE ORDERING IN THE NUCLEATION AND GROWTH OF GAP ON SI (211) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 534 - 539