IN-SITU DOMAIN MULTIPLICATION AND MIGRATION IN THE ANTIFERROELECTRIC CERAMIC PLSNZT

被引：1

作者：

DEGRAEF, M ^{[1
]}

CLARKE, DR ^{[1
]}

SPECK, JS ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

ULTRAMICROSCOPY | 1993年 / 52卷 / 02期

关键词：

D O I：

10.1016/0304-3991(93)90188-4

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The domain structures of an antiferroelectric perovskite in the system (Ph, La)(Zr, Sn, Ti)O-3 have been examined over a range of length scales by TEM. The structure consists of multiple orientation variants of a long range incommensurate modulation running along one of the < 110 > directions with an approximate wavelength 9a/root 2. The incommensurate modulation gives rise to several characteristic patterns of contrast. Beam-induced charging causes domain wall migration in specimens with an incomplete conductive coating. In one instance, a novel regenerative domain source was observed.

引用

页码：179 / 185

页数：7

共 7 条

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