CONTRIBUTION OF SPONTANEOUS EMISSION TO THE LINEWIDTH OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER

被引：59

作者：

GALLION, P

NAKAJIMA, H

DEBARGE, G

CHABRAN, C

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 14期

关键词：

D O I：

10.1049/el:19850443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：626 / 628

页数：3

共 12 条

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