THE INFLUENCE OF DEPOSITION CONDITIONS ON HYDROGEN-BOND CONFIGURATION AND TRAP SITES IN SPUTTERED SI3N4

被引：1

作者：

ANDERSON, HM ^{[1
]}

MARTIN, PM ^{[1
]}

机构：

[1] PACIFIC NW LAB, RICHLAND, WA 99352 USA

来源：

关键词：

D O I：

10.1149/1.2113998

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：978 / 979

页数：2

共 8 条

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PAUL, W .

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LANFORD, WA ;

RAND, MJ .

[4]

MARTIN PM, 1979, SOLAR ENERGY MATERIA, V2, P143

[5]

PEERCY PS, 1979, J ELECTRON MATER, V8, P1

[6]

PEERCY PS, 1983, MAY EL SOC M SAN FRA

[7] GAP STATES IN SILICON-NITRIDE [J].

ROBERTSON, J ;

POWELL, MJ .

[8] DEFECT AND IMPURITY STATES IN SILICON-NITRIDE [J].

ROBERTSON, J .