HYDROGEN MIXING EFFECTS ON REACTIVE ION ETCHING OF GAAS IN CHLORINE CONTAINING GASES

被引：11

作者：

SEMURA, S

SAITOH, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572597

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：474 / 476

页数：3

共 13 条

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[9] EFFECTS OF ION ETCHING ON PROPERTIES OF GAAS [J].

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[10] REACTIVE ION ETCHING OF GAAS IN CCI4-XFX(X=0,2,4) AND MIXED CCI4-XFX/AR DISCHARGES [J].

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GREENE, JE .

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