MODELING OF IRRADIATION-INDUCED CHANGES IN THE ELECTRICAL-PROPERTIES OF METAL-OXIDE SEMICONDUCTOR STRUCTURES

被引：12

作者：

CHURCHILL, JN ^{[1
]}

HOLMSTROM, FE ^{[1
]}

COLLINS, TW ^{[1
]}

机构：

[1] IBM CORP, DIV GEN PROD, SAN JOSE, CA 95114 USA

来源：

ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS | 1982年 / 58卷

关键词：

D O I：

10.1016/S0065-2539(08)61021-5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1 / 79

页数：79

共 120 条

[1] ANNEALING OF RADIATION-INDUCED POSITIVE CHARGE IN MOS DEVICES WITH ALUMINUM AND POLYSILICON GATE CONTACTS [J].

AITKEN, JM .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) :639-650

[2] RADIATION-INDUCED TRAPPING CENTERS IN THIN SILICON DIOXIDE FILMS [J].

AITKEN, JM .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 40 (1-3) :31-47

[3] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J].

AITKEN, JM ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1196-1198

[4] EFFECTS OF IONIZING RADIATION ON MOS DEVICES [J].

ANDRE, B ;

BUXO, J ;

ESTEVE, D ;

MARTINOT, H .

SOLID-STATE ELECTRONICS, 1969, 12 (02) :123-+

[5] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J].

AUBUCHON, KG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :117-+

[6] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J].

BARDEEN, J ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1948, 74 (02) :230-231

[7] Electrical conductivity of metals [J].

Bardeen, J .

JOURNAL OF APPLIED PHYSICS, 1940, 11 (02) :88-111

[8] RADIATION HARDENING OF MOS TRANSISTORS FOR LOW IONIZING DOSE LEVELS [J].

BARRY, AL ;

PAGE, DF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :255-&

[9] About the Quantum mechanics of Electrons in Crystal lattices. [J].

Bloch, Felix .

ZEITSCHRIFT FUR PHYSIK, 1929, 52 (7-8) :555-600

[10] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J].

BOESCH, HE ;

MCLEAN, FB ;

MCGARRITY, JM ;

AUSMAN, GA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2163-2167

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