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THE EXCITON PHONON SYSTEM IN GAAS-GA1-XALXAS QUANTUM-WELLS
被引：3
作者：
DEGANI, MH
HIPOLITO, O
机构：
关键词：
PHONONS - QUANTUM THEORY;
D O I：
10.1088/0268-1242/2/9/003
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
The binding energies of light- and heavy-hole exciton-phonon systems in GaAs-Ga//1// minus //xAl//xAs quantum wells are calculated as a function of the well thickness for several values of the heights of the potential barriers. A comparison between these results and recent experimental measurements is presented.
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页码：578 / 581
页数：4
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