MOLECULAR-BEAM EPITAXY GROWTH OF GAAS/INAS STRUCTURES ON (001) INP BY ALTERNATING III/V FLUXES

被引：8

作者：

KATSUMI, R

OHNO, H

ISHII, H

MATSUZAKI, K

AKATSU, Y

HASEGAWA, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：593 / 596

页数：4

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