LINEWIDTH BROADENING IN SEMICONDUCTOR-LASERS DUE TO MODE COMPETITION NOISE

被引：15

作者：

HENNING, ID

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 22期

关键词：

D O I：

10.1049/el:19830638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：935 / 936

页数：2

相关论文

共 5 条

[1] LINEWIDTH OF A SINGLE-MODE IN A MULTIMODE INJECTION-LASER [J].

ADAMS, MJ .

ELECTRONICS LETTERS, 1983, 19 (17) :652-653

[2] FUNDAMENTAL LINE BROADENING OF SINGLE-MODE (GAAL)AS DIODE-LASERS [J].

FLEMING, MW ;

MOORADIAN, A .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :511-513

[3] MEASUREMENTS OF THE SEMICONDUCTOR-LASER LINEWIDTH BROADENING FACTOR [J].

HENNING, ID ;

COLLINS, JV .

ELECTRONICS LETTERS, 1983, 19 (22) :927-929

[4] THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].

HENRY, CH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :259-264

[5] THEORY OF FM NOISE OF SINGLE-MODE INJECTION-LASERS [J].

SCHIMPE, R ;

HARTH, W .

ELECTRONICS LETTERS, 1983, 19 (04) :136-137