GROWTH OF AL FILMS BY GAS-TEMPERATURE-CONTROLLED CHEMICAL VAPOR-DEPOSITION

Epitaxial single-crystal aluminum (Al) films were deposited on 4-in.-diam silicon (Si) substrates by gas-temperature-controlled chemical vapor deposition using tri-isobutyl aluminum (TIBA). The TIBA was preheated just prior to the deposition by a gas-temperature controller (GTC). The crystallographic orientation of Al films was determined by the gas flow rate and the degree of thermal decomposition of TIBA. The GTC was thought to work in such a manner as to efficiently generate a desirable intermediate of unknown composition. Four kinds of Al single-crystalline epitaxial films on Si substrates were obtained: Al(001)/Si(001), Al(001)/Si(111), Al(111)/Si(111), and Al(110)/Si(115). The common epitaxial relationship in these films was Al[110BAR] parallel-to Si[110BAR] in the interfacial plane. Along this direction, four lattice spacings of Al matched three lattice spacings of Si at the interface.