SINGLE-TARGET SPUTTER-DEPOSITION AND POST-PROCESSING OF PEROVSKITE LEAD TITANATE THIN-FILMS

被引：22

作者：

REMIENS, D

TIRLET, JF

JABER, B

JOIRE, H

THIERRY, B

MORIAMEZ, C

机构：

[1] Laboratoire des Matériaux Industriels, Université de Valenciennes/CRITT Maubeuge, 59304 Valenciennes Cedex

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1994年 / 13卷 / 06期

关键词：

D O I：

10.1016/0955-2219(94)90131-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth of ferroelectric lead titanate (PT) thin films by RF magnetron sputtering using a single mixed-oxide target is described. This study has been focused on producing perovskite thin (2000 angstrom) films with the desired composition on different substrates. Depositions were performed at room temperature and the process gas is pure argon. The effects of deposition and post-annealing conditions on film composition and microstructure were evaluated. Optimization of process conditions is discussed in terms of stoichiometry, structure and reproducibility. The optical properties of the films have also been characterized.

引用

页码：493 / 500

页数：8

共 17 条

[1] FERROELECTRIC (PB,LA)(ZR,TI)O3 EPITAXIAL THIN-FILMS ON SAPPHIRE GROWN BY RF-PLANAR MAGNETRON SPUTTERING [J].