POSITIVE-TONE SILYLATED, DRY-DEVELOPED, DEEP-ULTRAVIOLET RESIST WITH 0.2 MU-M RESOLUTION

被引：3

作者：

HUTTON, RS

STEIN, SM

BOYCE, CH

CIRELLI, RA

TAYLOR, GN

BAIOCCHI, FA

KOVALCHICK, J

WHEELER, DR

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3919 / 3924

页数：6

共 8 条

[1]

Coopmans F., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V631, P34, DOI 10.1117/12.963623

[2]

GARZA CM, 1989, P SOC PHOTO-OPT INS, V1086, P229, DOI 10.1117/12.953034

[3]

HARTNEY MA, 1993, P SOC PHOTO-OPT INS, V1925, P270, DOI 10.1117/12.154761

[4]

Kornblit A., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V775, P320, DOI 10.1117/12.940441

[5]

MCDONALD SA, 1991, P SOC PHOTO-OPT INS, V1466, P2

[6]

TAYLOR GN, 1984, J ELECTROCHEM SOC, V131, P1659

[7]

THACKERAY JW, 1989, P SOC PHOTO-OPT INS, V1185, P2

[8] NEW SILICON-RICH SILYLATING REAGENTS FOR DRY-DEVELOPED POSITIVE-TONE DEEP-ULTRAVIOLET LITHOGRAPHY [J].

WHEELER, DR ;

HUTTON, S ;

STEIN, S ;

BAIOCCHI, F ;

CHENG, M ;

TAYLOR, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2789-2793

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